1/8 advanced data january 2003 stp11nm80 STB11NM80 n-channel 800v - 0.35 w -11ato-220/d 2 pak mdmesh?power mosfet typical r ds (on) = 0.35 w low gate input resistance low input capacitance and gate charge description the mdmesh? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the companys powermesh? horizontal layout. the resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the companys proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitions products. applications the 800 v mdmesh? family is very suitable for sin- gle switch applications in particular for flyback and forward converter topologies. absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) r ds(on) *q g i d stp11nm80 STB11NM80 800 v 800 v < 0.40 w < 0.40 w 14 w *nc 14 w *nc 11 a 11 a symbol parameter value unit v ds drain-source voltage (v gs =0) 800 v v dgr drain-gate voltage (r gs =20k w ) 800 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 11 a i d drain current (continuous) at t c = 100c 4.7 a i dm ( ) drain current (pulsed) 44 a p tot total dissipation at t c = 25c 205 w derating factor 1.64 w/c dv/dt(1) peak diode recovery voltage slope 15 v/ns t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c (1)i sd <11a, di/dt<400a/s, v dd stp11nm80 - STB11NM80 2/8 thermal data avalanche characteristics electrical characteristics (t case = 25 c unless otherwise specified) off on (1) dynamic note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. rthj-case thermal resistance junction-case max 0.61 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 11 a e as single pulse avalanche energy (starting t j = 25 c, i d =2.5a, v dd =50v) tbd mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 800 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 10 a v ds = max rating, t c = 125 c 100 a i gss gate-body leakage current (v ds =0) v gs = 30v 1 a symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250a 345v r ds(on) static drain-source on resistance v gs =10v,i d = 5.5a 0.35 0.40 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 7.5 a 5.2 s c iss input capacitance v ds =25v,f=1mhz,v gs =0 1600 pf c oss output capacitance 500 pf c rss reverse transfer capacitance 25 pf r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 2 w
3/8 stp11nm80 - STB11NM80 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 400v, i d = 5.5a r g = 4.7 w v gs =10v (see test circuit, figure 3) 27 ns t r rise time 14 ns q g total gate charge v dd = 400v, i d =11a, v gs =10v 40 56 nc q gs gate-source charge 10 nc q gd gate-drain charge 20 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd =400v,i d = 11a, r g = 4.7 w, v gs =10v (see test circuit, figure 5) 55 ns t f fall time 10 ns t c cross-over time tbd ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 11 a i sdm (2) source-drain current (pulsed) 44 a v sd (1) forward on voltage i sd =11a,v gs =0 1.5 v t rr reverse recovery time i sd = 11 a, di/dt = 100a/s, v dd = 100v, t j = 150c (see test circuit, figure 5) 635 ns q rr reverse recovery charge 5.9 c i rrm reverse recovery current 18.5 a
stp11nm80 - STB11NM80 4/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
5/8 stp11nm80 - STB11NM80 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
stp11nm80 - STB11NM80 6/8 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0o 8o d 2 pak mechanical data 3
7/8 stp11nm80 - STB11NM80 tape and reel shipment (suffix t4)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stp11nm80 - STB11NM80 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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